RF switches

ABSTRACT

RF switching devices are provided that alternatively couple an antenna to either a transmitter amplifier or a receiver amplifier. An exemplary RF switching device comprises two valves, one for a receiver transmission line between the antenna and the receiver amplifier, the other for a transmitter transmission line between the antenna and the power amplifier. Each valve is switchably coupled between ground and its transmission line. When coupled to ground, current flowing through the valve increases the impedance of the transmission line thereby attenuating signals on the transmission line. When decoupled from ground, the impedance of the transmission line is essentially unaffected. The pair of valves is controlled such that when one valve is on the other valve is off, and vice versa, so that the antenna is either receiving signals from the power amplifier or the receiver amplifier is receiving signals from the antenna.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.12/771,339 entitled “RF Switches” and filed on Apr. 30, 2010, now U.S.Pat. No. 8,532,584. This application is related to U.S. ProvisionalPatent Application No. 61/171,689 filed on Apr. 22, 2009 and entitled“Electronic Circuits including a MOSFET and a Dual-Gate JFET and havinga High Breakdown Voltage,” to U.S. patent application Ser. No.12/070,019 filed on Feb. 13, 2008 and entitled “High Breakdown VoltageDouble-Gate Semiconductor Device,” now U.S. Pat. No. 7,863,645, and toU.S. patent application Ser. No. 12/686,573 filed on Jan. 13, 2010 andentitled “Electronic Circuits including a MOSFET and a Dual-Gate JFET,”now U.S. Pat. No. 7,969,243, all three of which are incorporated hereinby reference.

BACKGROUND

1. Field of Invention

The present invention relates generally to semiconductor devices andmore particularly to radio frequency (RF) switches for use in RFapplications.

2. Related Art

FIG. 1 illustrates an exemplary transceiver 100 of the prior art coupledto an antenna 110. The transceiver 100 includes a switch 120, such as asolid-state single pole double throw switch, configured to switchbetween a power amplifier 130 and a receiver amplifier 140. Thetransceiver 100 further includes filters 150 disposed between the switch120 and the antenna 110.

In the prior art, the antenna 110 is sometimes coupled to multiplecircuits each comprising a switch 120, power amplifier 130, and receiveramplifier 140, where each such circuit is dedicated to a particularfrequency band. Here, the transceiver 100 handles one or more high bandsand/or one or more low bands, for example. In these instances thefilters 150 selectively remove frequencies outside of the particularfrequency band to which the circuit is dedicated.

Most of the power being produced by the power amplifier 130 is at somedesired frequency, however, some power also goes into harmonics of thatprimary frequency. Accordingly, another function of the filters 150 isto remove the higher harmonics of the transmitted signal so that theantenna 110 only transmits at the desired frequency.

In operation, the transceiver 100 transmits an RF signal by coupling thepower amplifier 130 to the antenna 110 and receives an RF signal bycoupling the receiver amplifier 140 to the antenna 110. It will beappreciated, however, that since the power amplifier 130 and thereceiver amplifier 140 are both coupled to the same switch 120, theswitch 120 can unintentionally couple the high-power transmitted RFsignal onto the receiver transmission line 160, an effect known asparasitic leakage.

Additionally, the switch 120 needs to be able to handle the highvoltages produced by the power amplifier, in the range of about 15 to 30volts. Such voltages are too high for metal oxide semiconductor (MOS)switches to withstand.

SUMMARY

Exemplary articles of manufacture of the present invention comprisesemiconductor devices, transceivers, and communication devices. Invarious embodiments, the articles of manufacture are implementedentirely on silicon substrates using Complementary Metal OxideSemiconductor (CMOS) technologies. An exemplary article of manufacturecomprises a power amplifier, a receiver amplifier, and first and secondtransmission lines. The first transmission line extends between thepower amplifier and an antenna port, and the second transmission lineextends between the receiver amplifier and the antenna port. Theexemplary embodiment also comprises first and second valves. The firstvalve is configured to change an impedance of the first transmissionline and the second valve is configured to change an impedance of thesecond transmission line. In the exemplary embodiment the first andsecond valves are controllable such that when one is open the other isclosed. In various embodiments, the article of manufacture additionallycomprises control logic configured to oppositely control the first andsecond valves. In those embodiments in which the article of manufacturecomprises a communications device, for example, the article ofmanufacture can further comprise an antenna coupled to the antenna port.

In various embodiments, the first valve and/or the second valve caninclude a double-gate semiconductor device that is controllable tocouple and decouple the valve to and from ground in order to switch thevalve on and off, respectively. Also in various embodiments, the firsttransmission line includes a transmission line segment and the firstvalve and/or the second valve can include first and second lines bothjoined to the first transmission line at a node. In these embodiments,the first line includes a first line segment disposed along the segmentof the transmission line, and the second line includes a second linesegment disposed along the segment of the transmission line.

The exemplary article of manufacture, in some embodiments, does notinclude a filter between the power amplifier and the antenna to removeharmonics of the primary frequency since the overall circuit gives riseto a strong attenuation of frequencies on the first transmission line atfrequencies above the primary frequency of the power amplifier evenwhile the attenuation around the operating frequency on the firsttransmission line is inconsequential. In various embodiments, the firstand/or second valves have an insertion loss of less than 0.5 dB. Also invarious embodiments, the first valve can provide at least 22 dB ofisolation at the primary frequency of the power amplifier.

The present invention also provides methods for alternately sending andreceiving with an antenna. An exemplary method comprises alternatinglytransmitting RF signals from a power amplifier to an antenna andreceiving RF signals from the antenna. More specifically, the step oftransmitting the RF signals from the power amplifier to the antenna isperformed over a transmitter transmission line while simultaneouslyimpeding the RF signals on a receiver transmission line coupled betweenthe receiver amplifier and the antenna. Similarly, the step of receivingRF signals from the antenna is performed over the receiver transmissionline while simultaneously impeding RF signals from the power amplifieron the transmitter transmission line. In various embodiments, a CMOSdevice switches from the power amplifier transmitting RF signals to theantenna over the transmitter transmission line to the receiver amplifierreceiving RF signals from the antenna over the receiver transmissionline.

In some embodiments impeding the RF signals on the receiver transmissionline includes maintaining a first valve, disposed between the receivertransmission line and ground, in an on state. Likewise, in someembodiments, impeding RF signals from the power amplifier on thetransmitter transmission line includes maintaining a second valve,disposed between the transmitter transmission line and ground, in an onstate. In some of these embodiments, the first and/or second valvesinclude a double-gate semiconductor device and the step of maintainingthe valve in the on state includes controlling the gates of thedouble-gate semiconductor device such that the double-gate semiconductordevice conducts between a source and a drain thereof. Controlling thegates of the double-gate semiconductor device such that the double-gatesemiconductor device does not conduct between the source and the drainturns the valve off, removing the impedance from the valve on therespective transmission line allowing either transmission from the poweramplifier to the antenna, or reception by the receiver amplifier fromthe antenna.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic representation of a prior art transceiver coupledto an antenna.

FIG. 2 is a schematic representation of a communications deviceaccording to an exemplary embodiment of the invention.

FIG. 3 is a schematic representation of a valve according to anexemplary embodiment of the invention.

FIG. 4 is a schematic representation of a layout of the line segments ofa valve according to an exemplary embodiment of the invention.

FIG. 5 is a schematic representation of a layout of the line segments ofa valve according to another exemplary embodiment of the invention.

FIG. 6 is a schematic representation of a layout of the line segments ofa valve according to still another exemplary embodiment of theinvention.

FIG. 7 is a schematic representation of a valve according to anotherexemplary embodiment of the invention.

FIG. 8 is a graph showing attenuation as a function of signal frequencyon a transmission line due to an exemplary valve in the “on” state,according to an exemplary embodiment of the invention.

FIG. 9 is a graph showing attenuation as a function of signal frequencyon a transmission line due to an exemplary valve in the “off” state,according to an exemplary embodiment of the invention.

FIG. 10 is a graph showing overall attenuation on a transmittertransmission line according to an exemplary embodiment of the invention.

FIG. 11 is a flowchart representation of a method for sending andreceiving signals according to an exemplary embodiment of the invention.

DETAILED DESCRIPTION

The present disclosure is directed to RF switching devices capable ofalternatively coupling an antenna to either a transmitter amplifier or areceiver amplifier. The present disclosure is also directed to articlesof manufacture that include such RF switching devices, such asintegrated circuits (ICs) and mobile communications devices likePersonal Digital Assistants (PDAs), cell phones, smart phones, and soforth. The present disclosure is also directed to methods of operatingRF switching devices, and devices that incorporate such RF switchingdevices.

An exemplary RF switching device of the present invention comprises twovalves, one valve configured to control a receiver transmission linedisposed between an antenna and a receiver amplifier, and the othervalve configured to control a transmitter transmission line between theantenna and a power amplifier. A valve, defined specifically elsewhereherein, comprises a circuit that switchably couples a transmission lineto ground. When the circuit is coupled to ground, current flowingthrough the circuit increases the impedance of the transmission linethereby heavily attenuating signals on the transmission line. Whendecoupled from ground, the impedance of the transmission line isessentially unaffected and attenuation of signals due to the presence ofthe value is minimal. The pair of valves is controlled such that whenone valve is on the other valve is off, and vice versa, so that theantenna is either receiving signals from the power amplifier or thereceiver amplifier is receiving signals from the antenna.

FIG. 2 is a schematic representation of a communications device 200including an antenna 110, a power amplifier 130, receiver amplifier 140,a transmitter transmission line 210 that couples the power amplifier 130to the antenna 110, and a receiver transmission line 220 that couplesthe receiver amplifier 140 to the antenna 110. The device 200 furthercomprises valves 230 and 240 coupled to the transmission lines 220, 230,respectively. Additionally, the device 200 comprises control logic 250configured to control the valves 230, 240. Control logic 250 isconfigured to receive a control signal on a control line 260 and tooutput opposite signals to each of the two valves 230, 240. For example,if valve 230 receives a high voltage then valve 220 receives a lowvoltage, and vice versa, according to the control signal. A simpleexample of control logic 250 is a NAND gate.

The device 200 optionally also comprises impedance matching circuits 270coupled to the transmission lines 210, 220 between the valves 230, 240and the antenna 110, and between the valves 230, 240 and the respectiveamplifiers 130, 140 as shown in FIG. 2. Impedance matching circuits 270can comprise, in some embodiments, a capacitor coupled between groundand a node on the transmission line 210, 220, and an inductor disposedin-line with the transmission line 210, 220 between the node and therespective valve 230, 240.

In some embodiments of the device 200, the power amplifier 130, receiveramplifier 140, valves 230, 240, and impedance matching circuits 250 aredisposed on a semiconductor chip within a package. In these embodiments,a connection is made between the antenna 110 and the transmission lines210, 220 through the package, for example, by joining bonding pads onthe chip to bonding pads on the package, and by joining bonding pads onthe package to bonding pads on a circuit board that includes the antenna110. In some embodiments the chip comprises a CMOS chip. A terminal endof a transmission line 210, 220 for joining the antenna 110 is referredto herein as an antenna port. Though not illustrated in FIG. 2, theantenna port is at the intersection of transmission lines 210, 220.

It will also be appreciated that the device 200 can additionally includefurther valves and amplifiers in parallel to the ones shown in FIG. 2 tohandle multiple frequency bands. For example, a high band and a low bandcan be accommodated by two power amplifiers 130 and two receiveramplifiers 140, each amplifier having a dedicated transmission line tothe antenna 110 and each dedicated transmission line controlled by adedicated valve.

The switch is connecting the antenna port (in many modern cases, theantenna is printed on the circuit board or on a specific substratemounted on the circuit board) on one side to the input of the low noiseamplifier of the receiver in one position or the output of poweramplifier in the other position.

A valve, as used herein, is defined as an electrical circuit having thefollowing components, arrangement, and properties. Specifically, a valvecomprises a segment of a transmission line, a first conductive linejoined at a node to the transmission line and including a segment thatis disposed along the segment of the transmission line, and a switchthat can couple and decouple the first line to ground. As used here, oneline segment is disposed along another line segment where the twosegments are disposed next to one another over some common path, wherethe path can comprise, for example, a straight line, a curved line, afigure-8, or a square wave pattern. Exemplary arrangements of the linesegments are illustrated in FIGS. 4-6.

The segments of the first and transmission lines are arranged such thatwhen current is flowing through both, the current in the transmissionline flows in one direction while current in the first line flows in theopposite direction. Since currents flowing in the segments of the firstand transmission lines flow in opposite directions, and since thesegment of the first line is disposed along the segment of thetransmission line, when currents flow through both the impedance of thesegment of the transmission line increases compared to when no currentis flowing in the first line. The increased impedance serves toattenuate the signals propagating along the transmission line.

Throughout this disclosure a valve is considered to be in the “on” statewhen current is flowing through the first line, and in the “off” stateotherwise. The impedance of the transmission line and the attenuation ofRF signals on the transmission line is high when the valve is on, andlow when the impedance valve is off. The impedance actually realized onthe transmission line is dependent on the frequency of the signal aswell as a function of the geometries of the line segments and the amountof current flowing in each.

Valves, as used herein, are distinguished from switches 120 of the priorart in that the switches 120 alternately couple one transmission line toeither of two other transmission lines, whereas a valve as used hereindoes not break transmission lines. Valves, as used herein, are alsodistinguished from field-effect transistors (FETs).

FIG. 3 schematically illustrates an exemplary valve 300. The valve 300comprises a transmission line 310 including a transmission line segment320, and a first line 330 including a first line segment 340 disposedalong the transmission line segment 320. Optionally, valve 300 alsocomprises a second line 350 and a second line segment 360 also disposedalong the transmission line segment 320. It will be understood thatalthough line segments 320, 340, and 360 are represented differently inFIG. 3 than the remainders of their respective lines, the physicaldimensions (width and thickness) of the metal traces within these linesegments may be no different than elsewhere on the lines.

The lines 330, 350 are joined to the transmission line 310 at a node370. The valve 300 also comprises a switch 380 that can couple anddecouple the lines 330, 350 to ground. The line segments 320 and 340,and optionally 360, are configured such that when currents are flowingthrough each, the currents flowing through the first and second linesegments 340, 360 are flowing in one direction while the current flowingthrough the transmission line segment 320 is flowing in the oppositedirection, as illustrated. In those embodiments that do not includesecond line 350, and when the valve is in the on state, the currentsflowing through transmission line 310 and through first line 330 areeach about half of the current received by the valve 300. In thoseembodiments that do include the second line 350, the current flowingthrough transmission line 310 is about half of the current received bythe valve 300, while the currents in each of the lines 330, 350 areabout one quarter of the current received by the valve 300. In someembodiments of the valve 300, the valve 300 has an insertion loss ofless than 0.5 dB. Preferably, any path length difference between thedistances from the node 370 to the segments 340, 360 should be aninteger multiple of the wavelength so that phase is maintained along thesegments 340, 360.

An exemplary portion of a valve is shown in FIG. 4. In this example, thetransmission line segment 320 comprises a circular arc with the firstand second line segments 340, 360 disposed along the transmission linesegment 320 on either side. The direction of current flow in each of theline segments 320, 340, 360 is shown with an arrow.

The lengths of the line segments 320, 340, 360 are similar but not equalin the example of FIG. 4. It will be appreciated that lengths of theline segments 320, 340, 360 can be made equal by having each arc subtenda different angle. Exemplary diameters of the circular arcs are from 300μm to 1 mm. Also, the widths of the line segments 320, 340, 360 in FIG.4 are equal, but in some embodiments the widths of the first and secondline segments 340, 360 are the same but different than the width of thetransmission line segment 320. In further embodiments the widths of eachline segment 320, 340, 360 are different. Connections to the linesegments 320, 340, 360 can be made through vias to traces in layersabove or below the plane of the drawing. Exemplary widths of the linesegments 320, 340, 360 are from 10 μm to 300 μm.

Another exemplary portion of a valve is shown in FIG. 5. In thisexample, the line segments 320, 340, 360 comprise stacked circular arcswith the line segments 340 and 360 disposed along the transmission linesegment 320 by being above and below the transmission line segment 320.In FIG. 5 the line segments 320, 340, 360 are shown in both a top planview and in cross-section. The top plan view shows a pair of leads 500that can be connected to any one of the line segments 320, 340, 360.Connections to the line segments 340 and 360 can alternatively be madethrough vias. The direction of current flow in each of the line segments320, 340, 360 are shown in the cross-sectional view. The cross-sectionalso shows dielectric layers 510 between the line segments 320, 340,360. In this embodiment the lengths, widths, and thicknesses of the linesegments 320, 340, 360 are the same, however, other embodiments are notso limited. Exemplary diameters of the circular arcs and widths of theline segments 320, 340, 360 are again from 300 μm to 1 mm and from 10 μmto 300 μm, respectively.

Still another exemplary portion of a valve is shown in FIG. 6. In thisexample, the transmission line segment 320 comprises a figure-8 withline segments 340, 360 disposed along the transmission line segment 320.In this embodiment the lengths and thicknesses of the line segments 320,340, 360 are the same, while the width of the transmission line segment320 is greater than the widths of the line segments 340, 360. Exemplarydiameters of the circular arcs of the lobes of the figure-8 and of thewidths of the line segments 320, 340, 360 are again from 300 μm to 1 mmand from 10 μm to 300 μm, respectively.

FIG. 7 schematically illustrates an exemplary embodiment of the valve300 in which the switch 380 comprises a double-gate semiconductor devicecomprising a source and a drain and controlled by MOS gate 710 and ajunction gate 720. U.S. patent application Ser. No. 12/070,019, notedabove, discloses such configurations. As provided in U.S. patentapplication Ser. No. 12/070,019, the MOS gate 710 and the junction gate720 are coupled together by control circuitry that can simply comprise acapacitor, in some instances. It will be appreciated that single-gatesemiconductor devices can also be used for the switch 380.

FIG. 8 is a graph showing attenuation as a function of signal frequencyon a transmission line due to an exemplary valve in the “on” state, andFIG. 9 shows a similar graph for the “off” state. Both graphs cover thesame frequency range out to 6 GHz but employ different vertical scales.In FIG. 8 it can be seen that when the valve is on the attenuation at 1GHz is about 10 dB and increases with decreasing frequency. When thevalve is off, in FIG. 9, the attenuation is substantially small at lowerfrequencies, reaching about 1.3 dB at 6 GHz. In an operating range up toabout 2 GHz, therefore, it can be seen that attenuation of the RFsignals on the transmission lines is insignificant when the valve isoff. On the other hand, when the valve is on, RF signals from the poweramplifier 130 are significantly attenuated. For additional attenuation,multiple valves can be arranged in series, for example. In someembodiments, the isolation provided at the primary frequency of thepower amplifier 130 by a valve that is on is at least 22 dB.

It will be appreciated that the graphs shown in FIGS. 8 and 9 show thebehavior of the exemplary valve when removed from the context of theoverall circuit. FIG. 10 illustrates the overall attenuation of thetransmitter transmission line 210 when the valve 230 is off, where thedifference between FIG. 9 and FIG. 10 is caused by the presence of therest of the circuitry of device 200. It can be seen from FIG. 10 thatwhen the power amplifier 130 is transmitting at a frequency of about 2GHz, the signal is largely unattenuated, however, a second harmonic atabout 4 GHz will be heavily attenuated, as will be the even higherharmonics. Accordingly, since the transmitter transmission line 210,even when the valve 230 is on, strongly attenuates frequencies above thefrequency of the primary frequency of the power amplifier 130, articlesof manufacture that include the circuitry of FIG. 2 may not include afilter between the power amplifier 130 and the antenna 110 to removeharmonics of the primary frequency. In some of these embodiments, theattenuation of the second harmonic is at least 20 dB without such afilter. Higher order harmonics are even more heavily attenuated. Forexample, the attenuation of a third harmonic can be at least 30 dB insome instances.

FIG. 11 provides a flowchart representation of an exemplary method 1100of the present invention. The method 1100 can be, for example, a methodof operating a communications device comprising an antenna coupled to atransceiver including an RF switching device. The method 1100 providesalternatingly switching between two steps, a step 1110 of transmittingan RF signal, and a step 1120 of receiving an RF signal.

In the step 1110 of transmitting the RF signal, the RF signal istransmitted from a power amplifier to an antenna over a transmittertransmission line. The step 1110 includes, at the same time, impedingthe RF signal on a receiver transmission line coupled between a receiveramplifier and the antenna. “Impeding,” when used herein with referenceto a signal, is defined to mean attenuating with an impedance that isbeing electrically induced in the transmission line carrying the signal.Accordingly, it will be understood that when, as in the prior artillustrated by FIG. 1, a signal on a transmission line is prevented fromreaching a receiver amplifier 130 by a switch 120 that broke theelectrical path between the receiver amplifier 130 and the antenna 110,the switch is not impeding the signal within the present usage, eventhough the switch 120 is in fact preventing the signal from reaching thereceiver amplifier 130. The other verb tenses of “impeding” aresimilarly defined.

In the step 1120 an RF signal is received from the antenna over thereceiver transmission line. The step 1120 includes, at the same time,impeding an RF signal from the power amplifier on the transmittertransmission line. The RF signal from the power amplifier can be, forexample, just noise when the power amplifier is not transmitting.

In either step 1110 or 1120, in various embodiments, impeding the RFsignal on either transmission line includes maintaining a valve in an onstate, where the valve is disposed between the transmission line andground. In some of these embodiments, the valve includes a double-gatesemiconductor device. In these same embodiments, maintaining the valvein the on state includes controlling the gates of the double-gatesemiconductor device such that the double-gate semiconductor deviceconducts between its source and its drain. In further embodiments, aCMOS device switches from the power amplifier transmitting RF signals tothe antenna over the transmitter transmission line in step 1110 to thereceiver amplifier receiving RF signals from the antenna over thereceiver transmission line in step 1120.

In the foregoing specification, the invention is described withreference to specific embodiments thereof, but those skilled in the artwill recognize that the invention is not limited thereto. Variousfeatures and aspects of the above-described invention may be usedindividually or jointly. Further, the invention can be utilized in anynumber of environments and applications beyond those described hereinwithout departing from the broader spirit and scope of thespecification. The specification and drawings are, accordingly, to beregarded as illustrative rather than restrictive. It will be recognizedthat the terms “comprising,” “including,” and “having,” as used herein,are specifically intended to be read as open-ended terms of art.

What is claimed is:
 1. An article of manufacture comprising: anamplifier; an antenna port; a transmission line extending between theamplifier and the antenna port and including a node between theamplifier and the antenna port, and a transmission line segment betweenthe amplifier and the antenna port; a first valve line joined to thetransmission line at the node and including a first valve line segmentdisposed along the transmission line segment; a second valve line alsojoined to the transmission line at the node and including a second valveline segment disposed along the transmission line segment; a switchconfigured to couple and decouple the first and second valve lines toand from ground; the first and second valve lines being arranged suchthat when a current is flowing in the transmission line and when theswitch couples the first and second valve lines to ground, currentsflowing from the node to the ground through the first and second valveline segments impedes the current flow through the transmission linesegment.
 2. The article of manufacture of claim 1 further comprising anantenna coupled to the antenna port.
 3. The article of manufacture ofclaim 1 further comprising control logic configured to control theswitch.
 4. The article of manufacture of claim 1 wherein the switchincludes a double-gate semiconductor device.
 5. The article ofmanufacture of claim 1 wherein the article of manufacture does notinclude a filter between the amplifier and the antenna port to removeharmonics of a primary frequency.
 6. The article of manufacture of claim1 wherein the transmission line segment comprises a circular arc.
 7. Thearticle of manufacture of claim 1 wherein the first valve line segmentis disposed in a first layer below the transmission line segment and thesecond valve line segment is disposed in a second layer above thetransmission line segment.
 8. The article of manufacture of claim 1wherein the transmission line segment and the first and second valveline segments are all disposed in a same layer.
 9. A method comprising:transmitting an RF signal from a power amplifier to an antenna over atransmitter transmission line while impeding the RF signal on a receivertransmission line coupled between a receiver amplifier and the antenna,where impeding the RF signal on the receiver transmission line includesmaintaining in an on state a valve disposed between the receivertransmission line and ground; and then switching to receiving an RFsignal from the antenna over the receiver transmission line whileimpeding an RF signal from the power amplifier on the transmittertransmission line.
 10. The method of claim 9 wherein the valve includesa double-gate semiconductor device and maintaining the valve in the onstate includes controlling the gates of the double-gate semiconductordevice such that the double-gate semiconductor device conducts between asource and a drain thereof.
 11. The method of claim 9 wherein impedingRF signals from the power amplifier on the transmitter transmission lineincludes maintaining a valve, disposed between the transmittertransmission line and ground, in an on state.
 12. The method of claim 11wherein the valve includes a double-gate semiconductor device andmaintaining the valve in the on state includes controlling the gates ofthe double-gate semiconductor device such that the double-gatesemiconductor device conducts between a source and a drain thereof. 13.The method of claim 9 wherein a CMOS device switches from the poweramplifier transmitting RF signals to the antenna over the transmittertransmission line to the receiver amplifier receiving RF signals fromthe antenna over the receiver transmission line.
 14. The method of claim9 wherein impeding the RF signal on the receiver transmission lineprovides an isolation of at least 22 dB at the primary frequency of thepower amplifier.